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| Datasheet File OCR Text: |
| NTE488 Silicon NPN Transistor RF Power Output Description: The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power Amplifiers on VHF band mobile radio applications. Features: D High Power Gain: Gpe 10.7dB @ VCC = 13.5V, PO = 3.5W, f = 175MHz D TO39 Metal Sealed Package for High Reliability D Emitter Electrode is Connected Electrically to the Case Application: 1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications. Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol V(BR)EBO V(BR)CBO IC = 10mA, IE = 0 V(BR)CEO IC = 50A, RBE = Test Conditions Min 4 35 17 Typ - - - Max Unit - - - V V V Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Symbol ICBO IEBO hFE PO Test Conditions VCB = 25V, IE = 0 VEB = 3V, IO = 0 VCE = 10V, IC = 0.1A, Note 1 VCC = 13.5V Pin = 0.3W, f = 175MHz Min - - 10 3.5 50 Typ - - 50 4.0 60 Max Unit 500 500 180 - - A A - W % Note 1. Pulse Test: PW = 150s duty = 5%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter/Case Collector 45 .031 (.793) |
Price & Availability of NTE488
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